Semiconductor device having an epitaxial substrate and a fabrication process thereof

ABSTRACT

A semiconductor device formed on an epitaxial substrate includes a high-resistance region in the vicinity of an interface between a doped semiconductor substrate and an epitaxial layer thereon. The high-resistance region is advantageously formed by an ion implantation process of a dopant opposite to a dopant contained in the doped semiconductor substrate such that there is formed a depletion of carriers in the vicinity of the foregoing interface.

BACKGROUND OF THE INVENTION

The present invention generally relates to semiconductor devices andmore particularly to a semiconductor device formed on a so-calledepitaxial substrate in which a semiconductor layer is grown on asemiconductor substrate epitaxially.

With the advancement in the art of ultra-fine lithography, semiconductordevices are miniaturized more and more. Today, so-called submicron orsub-halfmicron devices are studied intensively.

In such recent submicron or sub-halfmicron devices, there tends to arisea problem in that low density crystal defects, which cannot be avoidedeven in a high-quality single crystal Si substrate, cause an adversaryeffect on the operation of the semiconductor device formed on the Sisubstrate. Thus, in order to screen the effect of the crystal defects inthe Si substrate, it is proposed to use an epitaxial substrate in whicha Si layer is formed on the Si substrate epitaxially, for the substrateof highly miniaturized semiconductor devices.

When a conventional Si substrate is used for carrying a CMOS device, itis well known that there tends to occur a problem of latch-up of aparasitic thyristor that is formed in the Si substrate as a result offormation of diffusion regions of the CMOS device. When thesemiconductor device is miniaturized, the parasitic thyristor easilycauses a latch up and the normal operation of the semiconductor deviceis seriously disturbed. The use of the foregoing epitaxial substrate isquite effective for eliminating the problem of the latch-up of theparasitic thyristor. Further, the leakage current of the semiconductordevices is reduced significantly when such an epitaxial substrate isused for the substrate of the semiconductor devices.

FIG. 1 shows the principle of elimination of the problem of latch-up ofa CMOS integrated circuit by the use of an epitaxial substrate.

Referring to FIG. 1, there is formed a p⁻ -type epitaxial layer 1A of Sion a Si layer 1 of the p⁺ -type, and the p-type epitaxial layer 1A isformed with diffusion regions 3 and 5 as a source region or a drainregion of an n-channel MOS transistor T₁. Further, the p-type epitaxiallayer 1A is formed with an n-type well 2 adjacent to the n-channel MOStransistor T₁, and diffusion regions 4 and 6 are formed therein as asource region or a drain region of a p-channel MOS transistor T₂ that isformed in the n-type well 2.

It should be noted that the CMOS integrated circuit of FIG. 1 includes agate insulation film 7 and a gate electrode 9 on the epitaxial layer 1Ain correspondence to the channel region of the MOS transistor T₁.Further, the CMOS integrated circuit includes a gate insulation film 8and a gate electrode 10 on the epitaxial layer 1A in correspondence tothe n-type well 2. Further, the epitaxial layer 1A and the n-type well 2include a p⁺ -type diffusion region 11 and an n⁺ -type diffusion region12 respectively, for stabilizing the potential thereof.

In the CMOS integrated circuit of FIG. 1, it can be seen that there isformed a parasitic thyristor in the Si substrate such that the thyristorincludes a parasitic npn transistor 13 and a parasitic pnp transistor14, wherein the parasitic npn transistor 13 includes a base formed ofthe epitaxial layer 1A itself, an emitter formed of the n⁺ -typediffusion region 3 and a collector formed of the n-type well 2. On theother hand, the parasitic pnp transistor 14 includes a base formed ofthe n-type well 2 itself, an emitter of the p⁺ -type diffusion region 4and a collector of the p-type epitaxial layer 1A.

In the construction of FIG. 1, it can be seen that the base-emitterresistance R₁ of the transistor 13 is reduced substantially by disposingthe low-resistance p⁺ -type substrate 1 underneath the epitaxial layer1A. Thus, the turning-on of the transistor 13, and hence the turning-onof the parasitic thyristor, is substantially impeded. It should be notedthat the p⁺ -type Si substrate 1 forms a low-resistance current pathbetween the base and the emitter of the transistor 13.

Meanwhile, a semiconductor integrated circuit generally includes aprotection circuit in a part of the semiconductor substrate forming thesemiconductor integrated circuit for avoiding electrostatic damaging ofsemiconductor devices in the integrated circuit by a voltage surge.Generally, such a protection circuit is formed in the vicinity of aninput or electrode pad.

In the case of a semiconductor integrated circuit formed on an epitaxialsubstrate noted above, it should be noted that the turning-on of theprotective circuit tends to be impeded similarly to the case of theparasitic thyristor because of the presence of the low resistance Sisubstrate underneath the Si epitaxial layer when a voltage surge comesin. Thus, there is a tendency that a semiconductor integrated circuitformed on an epitaxial substrate tends to accumulate electric chargestherein. The electric charges thus accumulated are ultimatelydischarged, causing an electrostatic damaging to the semiconductordevices in the integrated circuit.

FIG. 2 shows an example of a conventional protection circuit usedconventionally in semiconductor integrated circuit in a state in whichthe protection circuit is provided in the epitaxial substrate of FIG. 1,wherein those parts of FIG. 2 corresponding to the parts describedpreviously are designated by the same reference numerals and thedescription thereof will be omitted.

Referring to FIG. 2, the epitaxial substrate 1A of the p⁻ -type isformed with a p-type well 21, wherein the p-type well 21 includes adiffusion region 21A of the n⁺ -type and another diffusion region 21B ofthe n⁺ -type such that a field oxide film 22 is interposed between thediffusion region 21A and the diffusion region 21B. The diffusion region21A is connected to an electrode pad 20 for external connection via aconductor line 20a. The diffusion region 21B is grounded. Further, inorder to maintain the potential of the p-type well 21 at the groundlevel, the well 21 is grounded via a p-type diffusion region 21C formedin the well 21.

In the protection circuit of FIG. 2, it should be noted that an externalsignal arrived at the electrode pad 20 reaches the diffusion region 21Avia the conductor line 20a and forwarded further to an internal circuitnot illustrated, via another conductor line 20b. The internal circuitmay include the CMOS circuit shown in FIG. 1.

In the protection circuit of FIG. 2, it should be noted that there isformed a lateral bipolar transistor 21a in the p-type well 21 such thatthe lateral bipolar transistor 21a includes an emitter formed of the n⁺-type diffusion region 21B and a collector formed of the n⁺ -typediffusion region 21A. The lateral bipolar transistor 21a thus formedconducts when a large positive surge is applied to the electrode pad 20and dissipates the electric charges of the surge to the ground. When alarge negative surge is applied to the electrode pad 20, on the otherhand, a forward biasing occurs in the p-n junction formed between the n⁺-type diffusion region 21A and the p-type well 21, and the electriccharges associated with the surge is dissipated to the ground from thediffusion region 21A through the well 21C and further through thediffusion region 21C.

In the case the protection circuit of FIG. 2 is formed in an epitaxialsubstrate as in the case of FIG. 1, however, it has been discovered thatthe resistance of the semiconductor devices in the semiconductorintegrated circuit against ESD (electrostatic discharge) experiences aserious deterioration. It is believed that this deterioration of theresistance against ESD is caused as a result of the diffusion of thep-type dopant from the highly doped Si substrate 1 to the epitaxiallayer 1A. Such a diffusion of the p-type dopant tends to occur in thefabrication of the semiconductor integrated circuit as a result ofthermal annealing processes used therein.

When such a diffusion of the p-type dopant occurs, the concentrationlevel of the p-type dopant in the epitaxial layer 1A is increased andthe resistance of the epitaxial layer 1A is decreased accordingly. Inother words, there appears a state in which the base and emitter of thelateral bipolar transistor 21a forming the protection circuit areeffectively connected. In such a state, the turning-on of the transistor21a is substantially impeded even when a large positive surge voltage isapplied to the terminal pad 20, and the surge voltage is applied to theprotection circuit as well as to the internal circuit of the integratedcircuit, causing an electrostatic damaging therein. Further, theelectric charges associated with the voltage surge are accumulated inthe protection circuit itself and damages the lateral bipolar transistor21a.

In the event a large negative voltage surge is applied to the externalterminal pad 20, on the other hand, a very large current is caused toflow due to the low resistance of the p-type well 21, wherein such alarge current destroys the protection circuit as a result of Jouleheating.

FIG. 4 shows the diffusion of B from the Si substrate 1 to the epitaxiallayer 1A for the case in which the epitaxial substrate is subjected to athermal annealing process conducted at 1000° C. for 30 minutes. In theexperiment of FIG. 4, it should be noted that the epitaxial layer 1A isformed with a thickness of about 2 μm and the Si substrate contains Bwith a concentration level of about 1×10¹⁹ cm⁻³. The epitaxial layer 1A,in turn, is substantially free from doping in the as-formed state andcontains B with a concentration level of about 1×10¹⁵ cm⁻³.

Referring to FIG. 4, it can be seen that the sharp transition of the Bconcentration level, observed at the interface between the Si substrate1 and the epitaxial layer 1A before the thermal annealing process,becomes diffused substantially after the thermal annealing process,indicating that a substantial amount of B atoms have diffused into theepitaxial layer 1A. In the illustrated example, it can be seen that aboundary defining the region in which the B concentration level is1×10¹⁹ cm⁻³ has moved into the epitaxial layer 1A with a distance ofabout 1 μm.

FIG. 5 shows the result of measurement of the resistance of the p-typewell 21 in the epitaxial layer 1A for various thicknesses of theepitaxial layer 1A.

Referring to FIG. 5, the result designated as "BULK" is for the case inwhich the measurement was conducted on a simple Si substrate byregarding the bulk of the p-type Si substrate as the p-type well 21. Inthis case, in which the thickness of the epitaxial layer 1A can beregarded substantially infinite, it was observed that the resistance ofthe well 21 is high and takes a value of about 3500Ω. On the other hand,this value of the resistance decreases with decreasing thickness of theepitaxial layer 1A and reaches less than 100Ω when the thickness of thelayer 1A becomes smaller than about 2 μm. This indicates that there is asubstantial diffusion of B from the p⁺ -type Si substrate 1 as explainedwith reference to FIG. 4.

FIG. 6 shows the relationship between the voltage in which theprotection circuit is damaged by ESD and the thickness of the epitaxiallayer 1A, wherein the test of the ESD is conducted by accumulating apositive or negative voltage surge in a capacitor of 200 pF capacitanceand applying the voltage thus accumulated to the protection circuitrepeatedly for 5 times with an interval of 0.5 seconds. The damaging ofthe protection circuit thus tested is evaluated by measuring a leakagecurrent.

Referring to FIG. 6, it can be seen that the voltage or failure voltagein which the foregoing electrostatic damaging occurs in the protectioncircuit decreases with decreasing thickness of the epitaxial layer 1Afor any of the positive and negative surges and reaches a voltage of aslow as about 200V when the thickness of the epitaxial layer 1A isreduced to about 2 μm. Thus, it can be seen that the diffusion of B fromthe p⁺ -type Si substrate 1 to the epitaxial layer 1A explained withreference to FIG. 4 causes a profound effect on the operation of thesemiconductor integrated circuit that is formed on the epitaxial layer1A.

SUMMARY OF THE INVENTION

Accordingly, it is a general object of the present invention to providea novel and useful semiconductor device and a fabrication processwherein the problems described heretofore are eliminated.

Another and more specific object of the present invention is to providea semiconductor device formed on an epitaxial substrate including adoped substrate and an epitaxial layer formed thereon in which thediffusion of a dopant element from the doped substrate to the epitaxiallayer is minimized.

Another object of the present invention is to provide a semiconductordevice, comprising:

a semiconductor substrate doped with an impurity element to a firstimpurity concentration level;

an epitaxial layer formed on said semiconductor substrate, saidepitaxial layer containing said impurity element with a second impurityconcentration level substantially smaller than said first impurityconcentration level;

an active device formed on said epitaxial layer; and

a barrier layer formed at an interface between said semiconductorsubstrate and said epitaxial layer for blocking a diffusion of saidimpurity element from said semiconductor substrate to said epitaxiallayer.

Another object of the present invention is to provide a method offabricating a semiconductor device, comprising the steps of:

forming a barrier layer on a semiconductor substrate doped with animpurity element to a first impurity concentration level, said barrierlayer blocking a diffusion of said impurity element thereinto;

forming an epitaxial layer containing said impurity element with asecond impurity concentration level substantially smaller than saidfirst impurity concentration level, on said semiconductor substrate suchthat said epitaxial layer covers said barrier layer; and

forming an active device on said epitaxial layer.

According to the present invention, the diffusion of the impurityelement from the doped semiconductor substrate to the epitaxial layer iseffectively blocked by the barrier layer, and the problem of delayedturning-on of the protection circuit provided in the epitaxial layer foravoiding the electrostatic damaging of the semiconductor device iseffectively eliminated.

Another object of the present invention is to provide a semiconductordevice, comprising:

a semiconductor substrate doped with an impurity element to a firstimpurity concentration level;

an epitaxial layer formed on said semiconductor substrate, saidepitaxial layer containing said impurity element with a second impurityconcentration level substantially smaller than said first impurityconcentration level;

an active device formed on said epitaxial layer; and

a high-resistance layer formed at an interface between saidsemiconductor substrate and said epitaxial layer.

According to the present invention, the current path between theepitaxial layer and the highly doped semiconductor substrate iseffectively blocked by the high resistance layer and the problem ofdelayed turning-on of the protection circuit provided in the epitaxiallayer for avoiding the electrostatic damaging of the semiconductordevices effectively eliminated.

Another object of the present invention is to provide a method offabricating a semiconductor device, comprising the steps of:

forming an epitaxial layer on a semiconductor substrate doped by a firstimpurity element with a first impurity concentration level, such thatsaid epitaxial layer contains said first impurity element with a secondimpurity concentration level substantially smaller than said firstimpurity concentration level, said semiconductor substrate and saidepitaxial layer thereby forming an epitaxial substrate; and

introducing a second impurity element of a conductivity type opposite toa conductivity type of said first impurity element, into said epitaxialsubstrate in the vicinity of an interface between said semiconductorsubstrate and said epitaxial layer by an ion implantation process.

According to the present invention, it is possible to form a highresistance region inside the epitaxial substrate after the epitaxialsubstrate is formed, by introducing the second impurity element suchthat the second impurity element neutralizes the carriers created in theepitaxial substrate by the first impurity element diffused from thesemiconductor substrate into the epitaxial layer. Thereby, the currentpath between the epitaxial layer and the underlying highly dopedsemiconductor substrate is effectively blocked and the problem ofdelayed turning-on of a protection circuit provided in the epitaxiallayer for avoiding an electrostatic damaging of the semiconductor deviceis effectively eliminated.

Other objects and further features of the present invention will becomeapparent from the following detailed description when read inconjunction with the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing the problem of CMOS latch-up occurring in aCMOS device formed on a conventional epitaxial substrate;

FIG. 2 is a diagram showing the construction of a conventionalprotection circuit used in a semiconductor integrated circuit;

FIG. 3 is a diagram explaining the problem of diffusion of impurityelement that occurs in a conventional epitaxial substrate;

FIG. 4 is a diagram showing the diffusion profile of an impurity elementoccurring in a conventional epitaxial substrate;

FIG. 5 is a diagram showing the problem that arises in a conventionalepitaxial substrate as a result of diffusion of the impurity element;

FIG. 6 is another diagram showing the problem that arises in aconventional epitaxial substrate as a result of diffusion of theimpurity element;

FIG. 7 is a diagram showing the principle of the present invention;

FIG. 8 is another diagram showing the principle of the presentinvention;

FIG. 9 is another diagram showing the principle of the presentinvention;

FIG. 10 is another diagram showing the principle of the presentinvention;

FIG. 11 is another diagram showing the principle of the presentinvention;

FIG. 12 is another diagram showing the principle of the presentinvention;

FIG. 13 is a diagram showing the construction of a semiconductor deviceaccording to a first embodiment of the present invention;

FIGS. 14A-14C are diagrams showing various modifications of the firstembodiment;

FIGS. 15A-15C are diagrams showing a fabrication process of asemiconductor device according to a second embodiment of the presentinvention; and

FIG. 16 is a diagram showing an alternative example of a protectioncircuit which can be used in the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[Principle]

FIG. 7 shows the principle of the present invention, wherein those partscorresponding to the parts described previously are designated by thesame reference numerals and the description thereof will be omitted.

Referring to FIG. 7, the present invention provides a high-resistancelayer 1B in the epitaxial substrate in the vicinity of an interfacebetween the highly doped semiconductor substrate 1 and the epitaxialsubstrate 1A such that the high-resistance layer 1B is located rightunderneath the p-type well 21 in which the protection circuit of FIG. 2is formed. By forming the protection circuit in the p-type well 21 assuch, the protection circuit easily and reliably turns on when a surgecomes in from the input or output electrode pad 20 and the surge currentis immediately dissipated to the ground. Thereby, the internal circuitof the semiconductor integrated circuit and further the protectioncircuit itself are effectively protected against electrostatic damaging.

It should be noted that the high-resistance layer 1B may be formed byintroducing an impurity element having a conductivity type opposite tothe conductivity type of the impurity element contained in thesemiconductor substrate 1, into the epitaxial substrate. In thisapproach, the ion implantation is made to the region in the vicinity ofthe interface between the semiconductor substrate 1 and the epitaxiallayer 1A, with an amount sufficient for canceling out or neutralizingthe carriers that are created by the impurity element that have diffusedinto the epitaxial layer from the semiconductor substrate.

Alternatively, the high-resistance layer 1B may be formed by a diffusionbarrier layer that blocks the diffusion of the impurity element, B inthe case of FIG. 7, from the highly doped semiconductor substrate 1 tothe epitaxial layer 1A. By doing so, the decrease of resistance of theepitaxial layer 1A is effectively suppressed and a normal operation isguaranteed for the protection circuit of FIG. 2. Further, thehigh-resistance layer 1B may be formed by growing a doped region havinga conductivity type opposite to the conductivity type of the highlydoped semiconductor substrate 1, on the surface of the semiconductorsubstrate 1 epitaxially. Thereby, the epitaxial layer 1A is grown on thesemiconductor substrate 1 such that the epitaxial layer 1A covers thehigh-resistance layer 1B. It is preferable that the high-resistancelayer 1B is formed right underneath the p-type well 21 in which theprotection circuit is formed.

FIG. 8 shows the concentration profile of P introduced into theepitaxial substrate by an ion implantation process for forming thehigh-resistance layer 1B of FIG. 7, wherein the vertical axis representsthe concentration of P while the horizontal axis represents the depth asmeasured from the top surface of the epitaxial layer 1A. The result ofFIG. 8 is for the case in which the epitaxial layer 1A is formed with athickness of 2 μm.

Referring to FIG. 8, the Si substrate 1 contains B with a concentrationlevel of 1×10¹⁹ cm⁻³ similarly to the case explained with reference toFIG. 4, and the ion implantation of P is conducted under an accelerationenergy of about 1.5 MeV with a dose of about 1×10¹³ cm⁻², wherein the P⁺ions are introduced slightly obliquely with an angle of 2° offset fromthe vertical direction of the substrate principal surface.

After a thermal diffusion process conducted at 1000° C. for about 30minutes, it can be seen that there appears a distribution of P such thatthe peak of the P distribution is located slightly above the interfacebetween the substrate 1 and the epitaxial layer 1A and that theconcentration of P at the foregoing peak is about 2×10¹⁷ cm⁻³. It shouldbe noted that this concentration level of P is, while smaller than theconcentration level of B in the Si substrate 1, generally equal to theconcentration level of B at the same depth as measured from the surfaceof the epitaxial layer 1A.

FIG. 9 shows a hole concentration profile appearing in the epitaxialsubstrate of FIG. 8.

Referring to FIG. 9, it can be seen that there is formed a remarkabledepletion of holes in the epitaxial layer 1A in correspondence to theregion in which the concentration level of P thus introduced by the ionimplantation process exceeds the concentration level of B that havecaused a diffusion from the Si substrate 1.

In the ion implantation process of FIG. 8, it is also possible toincrease the dose of the P⁺ ions further. In this case, the conductivitytype is changed in correspondence to the high-resistance layer 1B andthe layer 1B is doped to the n-type. In such a case, while the layer 1Bitself is no longer a high-resistance layer, there is formed a p-njunction by the layer 1B and the Si substrate 1 underneath and thedepletion region associated with the p-n junction provides the functionof the high-resistance layer.

In the illustrated example of FIG. 8, it should be noted that the doseof P at the surface of the epitaxial layer 1A is set to about 1×10¹⁴cm⁻³ so that the conductivity type of the p-type well 21 on the surfaceof the epitaxial layer 1A is maintained. However, this is not amandatory condition and the dose of P may be increased further such thatthe conductivity type of the epitaxial layer 1A is changed. When such achange in the conductivity type is caused at the surface of theepitaxial layer 1A, the original conductivity type is easily restored bysimply carrying out an ion implantation process of the desiredconductivity type.

Further, it is also possible to form the high resistance layer 1B by adiffusion barrier that blocks the diffusion of the impurity element fromthe substrate 1, as noted previously.

FIG. 10 shows a concentration profile of P and B in the depth directionof the epitaxial substrate for the case in which an SiN layer having athickness of about 0.05 μm is formed for the high-resistance layer 1B,wherein the profile of FIG. 10 is for the case in which the foregoingepitaxial substrate is subjected to a thermal annealing processconducted at 1000° C. for about 30 minutes. In the example of FIG. 10,the Si substrate 1 is doped by P to the n⁺ -type with a concentrationlevel of about 5×10¹⁴ cm⁻³ while the epitaxial layer 1A is doped to thep-type by B to a concentration level of about 3×10¹⁴ cm⁻³. In FIG. 10,the vertical axis represents the impurity concentration level of B and Pwhile the horizontal axis represents the depth as measured from theinterface between the epitaxial layer 1A and the underlying Sisubstrate 1. Thus, the negative depth of FIG. 10 represents theepitaxial layer 1A.

Referring to FIG. 10, it can be seen that the diffusion of P from the Sisubstrate 1 to the epitaxial layer 1A is substantially completelyblocked by the SiN layer 1B. Similarly, the diffusion of B from theepitaxial layer 1A to the Si substrate 1 is also blocked substantiallycompletely. The result clearly indicates that the SiN layer 1B acts asan effective diffusion barrier of B or P.

FIG. 11 shows the result of a comparative experiment of the experimentof FIG. 10 in which the SiN layer 1B is omitted. Similarly to the caseof FIG. 10, the Si substrate 1 is doped to the n⁺ -type and theepitaxial layer 1A is doped to the p-type, and the distribution profileof B and P represents the result after a thermal annealing processconducted at 1000° C. for about 30 minutes.

Referring to FIG. 11, it can be seen that there occurs a substantialdiffusion of P in the epitaxial layer 1A from the Si substrate 1.Further, it is also clear that a substantial diffusion of B occurs alsofrom the epitaxial layer 1A to the Si substrate 1. Thus, when aprotection circuit of FIG. 2 is formed in the epitaxial layer thus dopedwith P, the protection circuit does not operate properly and there maybe caused an electrostatic damaging associated with the voltage surge.

FIG. 12 shows the distribution profile of B and P in the epitaxialsubstrate similar to the epitaxial substrate of FIG. 10 except that anSiO₂ layer having a thickness of about 0.05 μm is used for the highresistance layer 1B. Similarly to the experiment of FIG. 10, thedistribution profile is for the case in which a thermal annealingprocess at 1000° C. is applied for 30 minutes.

Referring to FIG. 12, it can be seen that the diffusion of P from thehighly doped Si substrate 1 into the epitaxial layer 1A is effectivelyblocked also in the case in which such an SiO₂ layer is used for thehigh-resistance layer 1B.

[First Embodiment]

FIG. 13 shows the construction of a semiconductor device according to afirst embodiment of the present invention.

Referring to FIG. 13, the semiconductor device of the present embodimentis constructed on an epitaxial substrate formed on a Si substrate 31 ofthe p⁺ -type, wherein the substrate 31 may be doped by B with aconcentration level of about 1×10¹⁹ cm⁻³ and may have a very low volumeresistivity of about 0.01 Ω·cm. Further, the epitaxial substrateincludes an epitaxial layer 31A of the p⁻ -type Si doped by B on the Sisubstrate 31 with a thickness of about 5 μm.

On the epitaxial layer 31A of the p⁻ -type, there is formed a p-typewell 41, while the p-type well 41 is formed with diffusion regions 41Aand 41B of the n⁺ -type such that the diffusion regions 41A and 41B areformed at both lateral sides of a field oxide film 42. Further, thep-type well 41 includes a diffusion region 41C of the p-type, whereinthe diffusion region 41B of the n⁺ -type and the diffusion region 41C ofthe p-type are grounded. Thus, the p-type well 41 is formed therein witha protection circuit for electrostatic damaging similar to the onedescribed with reference to FIG. 2.

On the other hand, the diffusion region 41A of the n⁺ -type is connectedto an input or output electrode pad 43 via a conductor pattern 43a andfurther to an internal circuit, which may include a CMOS circuit of FIG.1, via a conductor pattern 43b.

In the semiconductor device of the present embodiment, it should benoted that there is formed an SiN pattern 31B having a thickness ofabout 0.1 μm on the Si substrate 31 such that the SiN pattern 31B islocated right underneath the p-type well 41, and the SiN pattern 31B iscovered by an SiO₂ film 31C having a thickness of about 0.1 μm, whereinthe SiN pattern 31B and the SiO₂ film 31C thereon form together ahigh-resistance structure corresponding to the high-resistance layer 1Bof FIG. 7 described previously. Further, the high-resistance structurethus formed acts also as an effective barrier layer for blocking thediffusion of B from the semiconductor substrate 31 to the epitaxiallayer 31A.

In the fabrication process of the epitaxial substrate, the SiN pattern31B and the SiO₂ pattern 31C are formed by an ordinary CVD process, andthe epitaxial layer 31A is grown on the Si substrate 31 thus carryingthe patterns 31B and 31C by a lateral epitaxial overgrowth (ELO) processsuch that the epitaxial layer 31A covers the SiO₂ pattern 31C, and hencethe SiN pattern 31B located thereunder. More in detail, an Si layer ofthe p⁻ -type, containing therein B with a concentration level of about1×10¹⁴ cm⁻³, is deposited on the Si substrate 31 after the step offormation of the SiO₂ pattern 31C by a CVD process, wherein the Si layerthus deposited tends to include a polysilicon region in correspondenceto the part covering the SiO₂ pattern 31C. The polysilicon region thusformed is subsequently converted to a single crystal region by anannealing process such that a recrystallization occurs in thepolycrystal region in such a manner that the recrystallization proceedslaterally from the single crystal region surrounding the polysiliconregion.

FIGS. 14A-14C show various modifications of the semiconductor device ofthe first embodiment, wherein those parts corresponding to the partsdescribed previously are designated by the same reference numerals andthe description thereof will be omitted.

Referring to FIG. 14A, it can be seen that the Si substrate 31 of the p⁺-type includes a diffusion barrier layer 31D of a refractory metalsilicide such as CoSi₂ in correspondence to the foregoing p-type well41, and a high resistance pattern 31E of SiO₂ is formed so as to coverthe diffusion barrier layer 31D. In the construction of FIG. 14A, itshould be noted that the diffusion of B from the Si substrate 31 to theepitaxial layer 31A is blocked by the CoSi₂ pattern 31D, while thecurrent path underneath the p-type well 41, in which the protectioncircuit is formed, is interrupted by the SiO₂ pattern 31E. It should benoted that the diffusion barrier layer 31D is not limited to CoSi₂ butother refractory metal silicide such as TiSi₂, MoSi₂ or WSi₂ may also beused.

The refractory metal silicide layer 31D of FIG. 14A may be formed easilyby depositing a refractory metal pattern (not shown) on the Sisubstrate, followed by a thermal annealing process to cause a reactionbetween the refractory metal pattern and the Si substrate such that thedesired refractory metal silicide is formed. After the region 31D of therefractory metal silicide is thus formed, the remaining refractory metalis removed from the surface of the Si substrate 31 by a wet etchingprocess.

After the formation of the refractory metal silicide region 31D, theSiO₂ pattern 31D is provided so as to cover the region 31D, and theepitaxial substrate 31A is grown so as to cover the SiO₂ pattern 31Dsimilarly to the case of forming the structure of FIG. 13.

In the modification of FIG. 14B, on the other hand, the SiO₂ pattern 31Eis used both as the high-resistance layer and the diffusion barrierlayer. Thereby, it is no longer necessary to form the refractory metalsilicide region 31D in the substrate 31 and the fabrication process ofthe epitaxial substrate is simplified.

Further, in the modification of FIG. 14C, a Si pattern 31F, doped by Por As to the n⁺ -type, is formed on the Si substrate 31 of the p⁺ -typeepitaxially in correspondence to the p-type well 41, and the epitaxiallayer 31A is formed so as to cover the foregoing Si pattern 31F.

In the construction of FIG. 14C, it should be noted that the n⁺ -type Sipattern 31F does not act as an effective diffusion barrier. On the otherhand, the n⁺ -type Si pattern 31F forms a p-n junction with theunderlying Si substrate 31 of the p⁺ -type or with the Si epitaxiallayer 31A of the p⁻ -type, and the depletion region associated with thep-n junction acts as an effective high-resistance layer corresponding tothe high-resistance layer 1B of FIG. 7. Further, it should be noted thatthe n⁺ -type region 31F releases the n-type dopant toward the surface ofthe epitaxial layer 31A similarly to the Si substrate 31 when a thermalannealing process is applied, wherein it should be noted that the n-typedopants thus released tend to neutralize the p-type dopants that arereleased by the p⁺ -type substrate 31 and migrating to the surface ofthe epitaxial layer 31A. Thus, there is formed a region ofhigh-resistance, in which the carrier density is reduced, generally incorrespondence to the n⁺ -type region 31F. The construction of theepitaxial substrate of FIG. 14C is also effective for ensuring a normaloperation of the protection circuit.

As the n⁺ -type region 31F is formed epitaxially on the Si substrate 31,the formation of the epitaxial layer 31A occurs spontaneously by merelydepositing a p⁻ -type Si layer on the Si substrate and the need of theELO process is eliminated in the modification of FIG. 14C.

[Second Embodiment]

FIGS. 15A-15C are diagrams showing a fabrication process of asemiconductor device according to a second embodiment of the presentinvention, wherein those parts corresponding to the parts describedpreviously are designated by the same reference numerals and thedescription thereof will be omitted.

Referring to FIG. 15A, the p⁻ -type Si epitaxial layer 31A on the p⁺-type Si substrate 31 has a thickness of typically about 2 μm, and aresist pattern 51 is formed on the epitaxial layer 31A with a thicknessof typically 2.5-2.6 μm. The resist pattern 51 is formed with an opening51A. It is preferable that the resist pattern 51 can maintain the shapethereof stably even when the thickness of the resist is increased toseveral microns. In this regard, the use of a resist marketed bySumitomo Chemical Co., LTD. under the trade name of PF147B, or a resistmarketed by Japan Synthetic Rubber Co., LTD., is preferable.

Next, in the step of FIG. 15B, an ion implantation process of P isconducted while using the resist pattern 51 as a mask, such that the P⁺-ions are introduced into a region 31 of the epitaxial layer 31A locatedin the vicinity of the interface between the Si substrate 31 and theepitaxial layer 31A, wherein the ion implantation process may beconducted under the acceleration energy of about 1.5 MeV and with thedose of about 1×10¹³ cm⁻². While the ion implantation process used inthe present embodiment requires a relatively large acceleration voltage,such a large acceleration voltage can be realized when the Model G1520apparatus of Genus, Inc. CA, U.S.A. is used for the ion implantationprocess.

Next, in the step of FIG. 15C, the resist pattern 51 is removed and theepitaxial substrate thus introduced with P is subjected to a thermalannealing process conducted at 1000° C. for about 30 minutes. As aresult of the thermal annealing process, the P ions introduced in thestep of FIG. 15B form a high-resistance region 31H in the epitaxiallayer 31A at the location slightly above the interface between the Sisubstrate 31 and the epitaxial layer 31A.

Further, the diffusion region 41 of the p-type is formed in theepitaxial layer 31A in the step of FIG. 15C such that the diffusionregion 41 is located above the high-resistance region 31H. It should benoted that the diffusion region 41 may be formed simultaneously to thehigh-resistance region 31H, by introducing B ions in the step of FIG.15B to a surface region of the epitaxial layer 31A while using the sameresist pattern 51 as a mask.

As explained already with reference to FIGS. 8 and 9, the ionimplantation of P in the step of FIG. 15B is conducted by setting thedose such that the hole formation by the B ions diffused into theepitaxial layer 31A from the substrate 31 is substantially compensatedfor by the P ions. Thereby, it should be noted that the dose of P may beset higher such that not only the hole formation is compensated but alsothe formation of electrons is induced. In such a case, there is formedan n-type or n⁺ -type region in correspondence to the foregoing region31H, while such an n-type region is also effective for forming a highresistance region as a result of the formation of a p-n junction andassociated formation of a depletion region between the n-type region Hand the adjacent p-type epitaxial layer 31A or the semiconductorsubstrate 31. Further, it should be noted that the effect of decreasingthe hole concentration level and the associated effect of increasing theresistance are achieved in the region 31H even when the dose of the Pions in the region 31H is small and the compensation of the holes isinsufficient.

In the present embodiment, it should be noted that the formation of thehigh-resistance region 31H can be made after the epitaxial substrate isproduced. Further, there is no need of specific growth process such asthe LEO process when forming the high-resistance region 31H.

Further, it should be noted that the present invention is applicablealso to the case in which the conductivity type is reversed, asexplained with reference to FIGS. 10-12.

Further, the protection circuit formed in the well 41 is not limited tothe one explained with reference to FIG. 2 but a protection circuitshown in FIG. 16 may also be used.

Referring to FIG. 16, in which those parts corresponding to the partsdescribed previously are designated by the same reference numerals, itcan be seen that the field oxide film 42 in the embodiment of FIG. 13 isreplaced by a gate insulation film 42A and a gate electrode 42B thereon,wherein the gate electrode 42 grounded together with the diffusionregion 41B.

Further, the present invention is not limited to the embodimentsdescribed heretofore, but various variations and modifications may bemade without departing from the scope of the invention.

What is claimed is:
 1. A semiconductor device, comprising:asemiconductor substrate doped with a first impurity element of a firstconductivity type to a first impurity concentration level; an epitaxiallayer formed on said semiconductor substrate, said epitaxial layercontaining a second impurity element of the first conductivity type witha second impurity concentration level substantially smaller than saidfirst impurity concentration level; an active device formed on saidepitaxial layer; and a barrier layer formed at an interface between saidsemiconductor substrate and said epitaxial layer so as to cover alimited region corresponding to said active device, said barrier layerblocking a diffusion of said first impurity element from saidsemiconductor substrate to said epitaxial layer.
 2. A semiconductordevice as claimed in claim 1, wherein said barrier layer is formed of aninsulating material selected from a group consisting of SiO₂ and SiN. 3.A semiconductor device as claimed in claim 1, wherein said barrier layeris formed of a refractory metal compound.
 4. A semiconductor device asclaimed in claim 1, wherein said refractory metal compound is selectedfrom a group consisting of CoSi₂, TiSi₂, MoSi₂ and WSi₂.
 5. Asemiconductor device as claimed in claim 3, wherein said semiconductordevice further includes an insulation film covering said barrier layer.6. A semiconductor device as claimed in claim 1, wherein said barrierlayer is formed right underneath a part of said epitaxial layer in whicha protection circuit against electrostatic damaging is provided.
 7. Asemiconductor device as claimed in claim 1, wherein said first andsecond impurity elements are identical.
 8. A semiconductor device,comprising a semiconductor substrate doped with a first impurity elementof a first conductivity type to a first impurity concentration level;anepitaxial layer formed on said semiconductor substrate, said epitaxiallayer containing a second impurity element of said first conductivitytype with a second impurity concentration level substantially smallerthan said first impurity concentration level; an active device formed onsaid epitaxial layer; and a high-resistance layer formed in the vicinityof an interface between said semiconductor substrate and said epitaxiallayer so as to cover a limited region corresponding to said activedevice.
 9. A semiconductor device as claimed in claim 8, wherein saidhigh-resistance layer includes a semiconductor region containing asecond impurity element having a conductivity type opposite to aconductivity type of said first impurity element.
 10. A semiconductordevice as claimed in claim 9, wherein said high-resistance layercontains said second impurity element with a concentration levelsubstantially compensating for said first impurity element.
 11. Asemiconductor device as claimed in claim 8, wherein said high-resistancelayer is formed of an insulating material selected from a groupconsisting of SiO₂ and SiN.
 12. A semiconductor device as claimed inclaim 8, wherein said high-resistance layer is provided right underneatha part of said epitaxial layer in which a protection circuit againstelectrostatic damaging is provided.
 13. A semiconductor device asclaimed in claim 8, wherein said first and second impurity elements areidentical.